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High-power and highly reliable 780 nm band AlGaAs laser diodes with rectangular ridge structure

High-power and highly reliable 780 nm band AlGaAs laser diodes with rectangular ridge structure

Hiroyama, R.; Nomura, Y.; Furusawa, K.; Okamoto, S.; Hayashi, N.; Shono, M.; Sawada, M.
  • 期刊名称Electronics Letters
  • 作者Hiroyama, R.; Nomura, Y.; Furusawa, K.; Okamoto, S.; Hayashi, N.; Shono, M.; Sawada, M.
  • 卷第37卷
  • 期第1期
  • 印刷ISSN0013-5194
  • 文件大小90.32KB
  • 发表时间2001
  • DOI10.1049/el:20010020
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