Mechanism of Potential Profile Formation in Silicon Single-Electron Transistors Fabricated Using Pattern-Dependent Oxidation
- 期刊名称Japanese Journal of Applied Physics
- 作者Horiguchi, Seiji; Nagase, Masao; Shiraishi, Kenji; Kageshima, Hiroyuki; Takahashi, Yasuo; Murase, Katsumi
- 卷第40卷
- 印刷ISSN0021-4922
- 文件大小86.50KB
- 发表时间2001-1-15
- DOI10.1143/JJAP.40.L29
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