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Study of vacancy-type defects after Cu diffusion in GaAs

Study of vacancy-type defects after Cu diffusion in GaAs

V. Bondarenko; K. Petters; R. Krause-Rehberg; J. Gebauer; H.S. Leipner
  • 作者V. Bondarenko; K. Petters; R. Krause-Rehberg; J. Gebauer; H.S. Leipner
  • 印刷ISSN0921-4526
  • 文件大小154.85KB
  • 发表时间2001
  • DOI10.1016/s0921-4526(01)00805-5
  • 页码792-795
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