[IEEE 30th European Solid-State Device Research Conference - Cork, Ireland (2000.9.11-2000.9.13)] 30th European Solid-State Device Research Conference - Determination of the Recombination Lifetime in the Space Charge Region of MOS Field-Induced PN JunctionsSorge, R.; Heinemann, B.; Grabmeier, J.; Obermeier, G.; Richter, H. · 2000

[IEEE Proceedings of the 34th European Solid-State Device Research Conference - Leuven, Belgium (21-23 Sept. 2004)] Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850) - A two mask complementary LDMOS module integrated in a 0.25 μm SiGe:C BiCMOS platformEhwald, K.E.; Fischer, A.; Fuernhammer, F.; Winkler, W.; Senapati, B.; Barth, R.; Bolze, D.; Heinemann, B.; Knoll, D.; Ruecker, H.; Schmidt, D.; Shevchenko, I.; Sorge, R.; Wulf, H.-E. · 2004