Large-hole anode-type fast atom beam (LA-FAB) source and its application to high-aspect-ratio GaAs etching

• 期刊名称Applied Surface Science
• 作者Watanabe, Kenji; Hatakeyama, Masahiro; Ichiki, Katsunori; Satake, Tohru; Kato, Takao; Nagai, Kazutoshi
• 印刷ISSN0169-4332
• 文件大小315.61KB
• 发表时间2001-1
• DOI10.1016/s0169-4332(00)00797-2
• 页码603-606