Are false memories more difficult to forget than accurate memories? The effect of retention interval on recall and recognition
- 作者John G. Seamon; Chun R. Luo; Jonathan J. Kopecky; Catherine A. Price; Leeatt Rothschild; Nicholas S. Fung; Michael A. Schwartz
- 卷第30卷
- 期第7期
- 印刷ISSN0090-502X
- 电子ISSN1532-5946
- 文件大小161.91KB
- 发表时间2002-10
- DOI10.3758/bf03194323
- 页码1054-1064
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