Atomic diffusion at solid/liquid interface of silicon: Transition layer and defect formation

• 作者Motooka, Teruaki; Nishihira, Ken; Oshima, Ryuichiro; Nishizawa, Hirosato; Hori, Fuminobu
• 卷第65卷
• 期第8期
• 印刷ISSN1098-0121
• 电子ISSN1550-235X
• 文件大小909.90KB
• 发表时间2002
• DOI10.1103/physrevb.65.081304