Equivalent circuit model for a THz detector based on the double-electron layer tunneling transistor (DELTT)
- 作者Khodier, M.M.; Christodoulou, C.G.; Simmons, J.A.
- 卷第49卷
- 期第10期
- 印刷ISSN0018-9383
- 电子ISSN1557-9646
- 文件大小334.86KB
- 发表时间2002
- DOI10.1109/ted.2002.803641
- 页码1701-1708
Rare-earth-doped GaN switchable color electroluminescent devicesHeikenfeld, J.; Steckl, A.J. · 2002
High brightness ZnS and GaN electroluminescent devices using PZT thick dielectric layersMunasinghe, C.; Heikenfeld, J.; Dorey, R.; Whatmore, R.; Bender, J.P.; Wager, J.F.; Steckl, A.J. · 2005
Electroluminescent devices using a high-temperature stable GaN-based phosphor and thick-film dielectric layerHeikenfeld, J.; Steckl, A.J. · 2002
Photoluminescent and electroluminescent Zn2Si0.5Ge0.5O4:Mn thin films for integrated optic devicesBaker, C.C.; Heikenfeld, J.; Steckl, A.J. · 2002
Maximizing Alq/sub 3/ OLED internal and external efficiencies: charge balanced device structure and color conversion outcoupling lensesWeixin Li; Jones, R.A.; Allen, S.C.; Heikenfeld, J.C.; Steckl, A.J. · jdt/2/2/jdt-2-2-143.pdf · 2006