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Development of AIIBVI Semiconductors Doped with Cr for IR Laser Application

Development of AIIBVI Semiconductors Doped with Cr for IR Laser Application

V.A. Kasiyan; R.Z. Shneck; Z.M. Dashevsky; S.R. Rotman
  • 作者V.A. Kasiyan; R.Z. Shneck; Z.M. Dashevsky; S.R. Rotman
  • 卷第229卷
  • 期第1期
  • 印刷ISSN0370-1972
  • 电子ISSN1521-3951
  • 文件大小79.48KB
  • 发表时间2002
  • DOI10.1002/1521-3951(200201)229:1<395::aid-pssb395>3.0.co;2-4
  • 页码395-398
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