Binding Energy of Negatively Charged Exciton in a Semiconductor Quantum Well: The Role of Interface Defects

• 作者L.C.O. Dacal; R. Ferreira; G. Bastard; J.A. Brum
• 卷第190卷
• 期第3期
• 印刷ISSN1862-6319
• 文件大小72.51KB
• 发表时间2002
• DOI10.1002/1521-396x(200204)190:3<799::aid-pssa799>3.0.co;2-8
• 页码799-802