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Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors

Conduction and low frequency channel noise of GaAs based pseudomorphic high electron mobility transistors

Valenza, M.; Vildeuil, J. C.; Rigaud, D.

期刊名称Journal of Applied Physics
作者Valenza, M.; Vildeuil, J. C.; Rigaud, D.
卷第91卷
期第5期
印刷ISSN0021-8979
文件大小328.83KB
发表时间2002
DOI10.1063/1.1445494

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