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Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

Two charge states of dominant acceptor in unintentionally doped GaN: Evidence from photoluminescence study

Reshchikov, M. A.; Morkoç, H.; Park, S. S.; Lee, K. Y.

期刊名称Applied Physics Letters
作者Reshchikov, M. A.; Morkoç, H.; Park, S. S.; Lee, K. Y.
卷第81卷
期第26期
印刷ISSN0003-6951
文件大小312.22KB
发表时间2002
DOI10.1063/1.1531227

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