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Deep-level defects in InGaAsN grown by molecular-beam epitaxy

Deep-level defects in InGaAsN grown by molecular-beam epitaxy

Kaplar, R. J.; Ringel, S. A.; Kurtz, Steven R.; Klem, J. F.; Allerman, A. A.

期刊名称Applied Physics Letters
作者Kaplar, R. J.; Ringel, S. A.; Kurtz, Steven R.; Klem, J. F.; Allerman, A. A.
卷第80卷
期第25期
印刷ISSN0003-6951
文件大小302.74KB
发表时间2002
DOI10.1063/1.1483912

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