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Reduced pressure chemical vapor deposition of Si/Si[sub 1−y]C[sub y] heterostructures for n-type metal–oxide–semiconductor transistors

Reduced pressure chemical vapor deposition of Si/Si[sub 1−y]C[sub y] heterostructures for n-type metal–oxide–semiconductor transistors

J. M. Hartmann; T. Ernst; V. Loup; F. Ducroquet; G. Rolland; D. Lafond; P. Holliger; F. Laugier; M. N. Séméria; S. Deleonibus
  • 作者J. M. Hartmann; T. Ernst; V. Loup; F. Ducroquet; G. Rolland; D. Lafond; P. Holliger; F. Laugier; M. N. Séméria; S. Deleonibus
  • 文件大小882.48KB
  • 发表时间2002
  • DOI10.1063/1.1497451
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