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Influence of interface relaxation on passivation kinetics in H[sub 2] of coordination P[sub b] defects at the (111)Si/SiO[sub 2] interface revealed by electron spin resonance

Influence of interface relaxation on passivation kinetics in H[sub 2] of coordination P[sub b] defects at the (111)Si/SiO[sub 2] interface revealed by electron spin resonance

Stesmans, A.

期刊名称Journal of Applied Physics
作者Stesmans, A.
卷第92卷
期第3期
印刷ISSN0021-8979
文件大小438.70KB
发表时间2002
DOI10.1063/1.1482427

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