Editorial
- 期刊名称Research Papers in Education
- 作者Wragg, E C
- 卷第17卷
- 期第2期
- 印刷ISSN0267-1522
- 电子ISSN1470-1146
- 文件大小64.05KB
- 发表时间2002-01
- DOI10.1080/026715202760155894
- 页码123-124
Carrier lifetime in amorphous semiconductorsShen, D. S.; Conde, J. P.; Chu, V.; Wagner, S. · Journal of Applied Physics · 1994
Electrophotographic Patterning of a-Si:HGleskova, H.; Wagner, S.; Shen, D. S. · MRS Proceedings · 1995
Properties of amorphous silicon/amorphous silicon-germanium multilayersConde, J. P.; Chu, V.; Shen, D. S.; Wagner, S. · Journal of Applied Physics · 1994
Microcrystallinity in α-Si, Ge:H, F AlloysShen, D. S.; Kolodzey, J.; Slobodin, D.; Conde, J. P.; Lane, C.; Campbell, I. H.; Fauchet, P. M.; Wagner, S. · MRS Proceedings · 1986
a-Si:H TFTs Patterned Using Laser-Printed TonerGlesková, Helena; Wagner, S.; Shen, D. S. · MRS Proceedings · 1996
Growth-induced surface state in hydrogenated and fluorinated amorphous siliconMaruyama, A.; Liu, J. Z.; Chu, V.; Shen, D. S.; Wagner, S. · Journal of Applied Physics · 1991
Effect of Material Properties on the Performance of a-Si,Ge:H,F PhotodetectorsShen, D. S.; Conde, J. P.; Chu, V.; Aljishi, S.; Wagner, S. · MRS Proceedings · 1988
Electro-rheologyBlock, H; Kelly, J P · Journal of Physics D: Applied Physics · 1988
Semiconductor nanowiresLu, Wei; Lieber, Charles M · Journal of Physics D: Applied Physics · 2006
Nanoassembled model catalystsHeiz, Ueli; Schneider, Wolf-Dieter · Journal of Physics D: Applied Physics · 2000
Mechanisms for exchange biasStamps, R L · Journal of Physics D: Applied Physics · 2000
Thermal plasma waste treatmentHeberlein, Joachim; Murphy, Anthony B · Journal of Physics D: Applied Physics · 2008
Surface enhanced fluorescenceFort, Emmanuel; Grésillon, Samuel · Journal of Physics D: Applied Physics · 2008
Nanocomposite dielectrics—properties and implicationsNelson, J K; Hu, Y · Journal of Physics D: Applied Physics · 2005
Memristor-based neural networksThomas, Andy · Journal of Physics D: Applied Physics · 2013