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Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate

Structural Comparison between Ge and GaAs Films Grown by Molecular Beam Epitaxy on Si Substrate

Yu, Guolin; Ebisu, Hiroshi; Rahman, Md. Mosaddeq ur; Soga, Tetsuo; Jimbo, Takashi; Umeno, Masayoshi
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Yu, Guolin; Ebisu, Hiroshi; Rahman, Md. Mosaddeq ur; Soga, Tetsuo; Jimbo, Takashi; Umeno, Masayoshi
  • 卷第41卷
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小326.61KB
  • 发表时间2002-2-15
  • DOI10.1143/JJAP.41.579
  • 页码579-580
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