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Argon and oxygen ion chemistry effects in photoresist etching

Argon and oxygen ion chemistry effects in photoresist etching

F. Greer; L. Van; D. Fraser; J. W. Coburn; D. B. Graves
  • 作者F. Greer; L. Van; D. Fraser; J. W. Coburn; D. B. Graves
  • 文件大小436.08KB
  • 发表时间2002
  • DOI10.1116/1.1501578
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