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Electric field effect on the spatially separated electron–hole recombination in an Si/Si1−xGex resonant tunneling heterostructure

Electric field effect on the spatially separated electron–hole recombination in an Si/Si1−xGex resonant tunneling heterostructure

H. Mejri; F. Ben Zid; A. Bhouri; A. Ben fredj; M. Said; J.L. Lazzari; J. Derrien
  • 作者H. Mejri; F. Ben Zid; A. Bhouri; A. Ben fredj; M. Said; J.L. Lazzari; J. Derrien
  • 卷第322卷
  • 印刷ISSN0921-4526
  • 文件大小135.75KB
  • 发表时间2002
  • DOI10.1016/s0921-4526(02)00595-1
  • 页码37-41
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