In situ observations of crystal growth behavior of silicon melt

• 作者Kozo Fujiwara; Keiji Nakajima; Toru Ujihara; Noritaka Usami; Gen Sazaki; Hajime Hasegawa; Shozo Mizoguchi; Kazuo Nakajima
• 卷第243卷
• 期第2期
• 印刷ISSN0022-0248
• 文件大小375.20KB
• 发表时间2002
• DOI10.1016/s0022-0248(02)01521-x
• 页码275-282