The effects of buffer thickness on GaAs MESFET characteristics: channel–substrate current, drain breakdown, and reliability
- 作者Frank Gao; Ravi Chanana; Tom Nicholls
- 卷第42卷
- 期第7期
- 印刷ISSN0026-2714
- 文件大小555.31KB
- 发表时间2002
- DOI10.1016/s0026-2714(02)00064-1
- 页码1003-1010
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