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The effect of high acceptor dopant concentration of Zn<sup>2 </sup> on electrical, optical and structural properties of the In<sub>2</sub>O<sub>3</sub> transparent conducting thin films

The effect of high acceptor dopant concentration of Zn2  on electrical, optical and structural properties of the In2O3 transparent conducting thin films

Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad
  • 作者Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad
  • 卷第18卷
  • 期第2期
  • 印刷ISSN0268-1242
  • 电子ISSN1361-6641
  • 文件大小233.44KB
  • 发表时间2003
  • DOI10.1088/0268-1242/18/2/306
  • 页码97-103
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