Review of displacement damage effects in silicon devices
- 期刊名称IEEE Transactions on Nuclear Science
- 作者Srour, J.R.; Marshall, C.J.; Marshall, P.W.
- 卷第50卷
- 期第3期
- 印刷ISSN0018-9499
- 文件大小516.99KB
- 发表时间2003-06
- DOI10.1109/TNS.2003.813197
- 页码653-670
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