[IEEE International Semiconductor Device Research Symposium, 2003 - Washington, DC, USA (Dec. 10-12, 2003)] International Semiconductor Device Research Symposium, 2003 - Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD

Van Elshocht, S.; Brijs, B.; Caymax, M.; Conard, T.; De Gendt, S.; Kubicek, S.; Meuris, M.; Onsia, B.; Richard, O.; Teerlinck, I.; Van Steenbergen, J.; Zhao, C.; Heyns, M.

作者Van Elshocht, S.; Brijs, B.; Caymax, M.; Conard, T.; De Gendt, S.; Kubicek, S.; Meuris, M.; Onsia, B.; Richard, O.; Teerlinck, I.; Van Steenbergen, J.; Zhao, C.; Heyns, M.
文件大小120.68KB
发表时间2003
DOI10.1109/isdrs.2003.1271981
页码31-32

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[IEEE International Semiconductor Device Research Symposium, 2003 - Washington, DC, USA (Dec. 10-12, 2003)] International Semiconductor Device Research Symposium, 2003 - Physical characterization of HfO/sub 2/ deposited on Ge substrates by MOCVD