[IEEE IEEE International Electron Devices Meeting 2003 - Washington, DC, USA (8-10 Dec. 2003)] IEEE International Electron Devices Meeting 2003 - Physical mechanism for high hole mobility in [110]-surface strained- and unstrained-MOSFETs
- 作者Mizuno, T.; Sugiyama, N.; Tezuka, T.; Moriyama, Y.; Nakaharai, S.; Maeda, T.; Takagi, S.
- 文件大小289.76KB
- 发表时间2003
- DOI10.1109/iedm.2003.1269403