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Selective oxidation behavior of W/WN/polycrystalline-Si[sub 1−x]Ge[sub x] gate structure in H[sub 2]O+H[sub 2] ambient

Selective oxidation behavior of W/WN/polycrystalline-Si[sub 1−x]Ge[sub x] gate structure in H[sub 2]O+H[sub 2] ambient

Ahn, Tae-Hang; Yeo, In-Seok; Kim, Joong-Jung; Roh, Jae-Sung; Lee, Jung-Ho

期刊名称Applied Physics Letters
作者Ahn, Tae-Hang; Yeo, In-Seok; Kim, Joong-Jung; Roh, Jae-Sung; Lee, Jung-Ho
卷第82卷
期第18期
印刷ISSN0003-6951
文件大小414.24KB
发表时间2003
DOI10.1063/1.1572961

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