Post-transit photocurrent spectroscopy studies on the gap state distribution in hydrogenated amorphous silicon: Trap occupation problems in leaky junctions and high-defect-density samples

• 期刊名称Journal of Applied Physics
• 作者Sakata, I.; Yamanaka, M.
• 卷第94卷
• 期第5期
• 印刷ISSN0021-8979
• 文件大小449.17KB
• 发表时间2003
• DOI10.1063/1.1596365