Effect of Al[sub 2]O[sub 3] capping layer on suppression of interfacial SiO[sub 2] growth in HfO[sub 2]/ultrathin SiO[sub 2]/Si(001) structure

• 期刊名称Applied Physics Letters
• 作者Kundu, Manisha; Miyata, Noriyuki; Nabatame, Toshihide; Horikawa, Tsuyoshi; Ichikawa, Masakazu; Toriumi, Akira
• 卷第82卷
• 期第20期
• 印刷ISSN0003-6951
• 文件大小346.14KB
• 发表时间2003
• DOI10.1063/1.1576293