Temperature dependence of the surface reactivity of SiH3 radicals and the surface silicon hydride composition during amorphous silicon growth

• 作者W.M.M. Kessels; J.P.M. Hoefnagels; P.J. van den Oever; Y. Barrell; M.C.M. van de Sanden
• 卷第547卷
• 期第3期
• 印刷ISSN0039-6028
• 文件大小944.85KB
• 发表时间2003
• DOI10.1016/j.susc.2003.10.030