High-k Gate Dielectric Prepared by Low-Temperature Wet Oxidation of Ultrathin Metal Nitride Directly Deposited on Silicon

• 期刊名称Japanese Journal of Applied Physics
• 作者Choi, Sangmoo; Jeon, Sanghun; Cho, Myungjun; Hwang, Hyunsang
• 卷第42卷
• 印刷ISSN0021-4922
• 文件大小489.97KB
• 发表时间2003-2-1
• DOI10.1143/JJAP.42.L102