发现好书期刊，享受阅读乐趣

海量图书期刊资源，随时随地畅享阅读乐趣

A capacitance–voltage model for polysilicon-gated MOS devices including substrate quantization effects based on modification of the total semiconductor charge

A capacitance–voltage model for polysilicon-gated MOS devices including substrate quantization effects based on modification of the total semiconductor charge

Eric M. Vogel; Curt A. Richter; Brian G. Rennex

作者Eric M. Vogel; Curt A. Richter; Brian G. Rennex
卷第47卷
期第9期
印刷ISSN0038-1101
文件大小366.62KB
发表时间2003
DOI10.1016/s0038-1101(03)00099-6
页码1589-1596

← 返回【学霸图书馆】主页