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Growth temperature dependence of substitutional carbon incorporation in SiGeC/Si heterostructures

Growth temperature dependence of substitutional carbon incorporation in SiGeC/Si heterostructures

V. Loup; J. M. Hartmann; G. Rolland; P. Holliger; F. Laugier; M. N. Séméria

作者V. Loup; J. M. Hartmann; G. Rolland; P. Holliger; F. Laugier; M. N. Séméria
文件大小1471.06KB
发表时间2003
DOI10.1116/1.1541605

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