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Fabrication of wavelength-shifted In
<sub/>0.2</sub>
Ga
<sub/>0.8</sub>
As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures

Fabrication of wavelength-shifted In _0.2 Ga _0.8 As/GaAs multiple quantum well laser diodes by impurity-free vacancy disordering at different thermal annealing temperatures

Yu, Jae Su; Song, Jin Dong; Lee, Yong Tak; Lim, H

期刊名称Semiconductor Science and Technology
作者Yu, Jae Su; Song, Jin Dong; Lee, Yong Tak; Lim, H
卷第18卷
期第2期
印刷ISSN0268-1242
文件大小129.07KB
发表时间2003-02-01
DOI10.1088/0268-1242/18/2/319
页码170-173

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