Towards implementation of a nickel silicide process for CMOS technologies
C. Lavoie; F.M. d’Heurle; C. Detavernier; C. Cabral Jr.
- 作者C. Lavoie; F.M. d’Heurle; C. Detavernier; C. Cabral Jr.
- 卷第70卷
- 印刷ISSN0167-9317
- 文件大小652.39KB
- 发表时间2003
- DOI10.1016/s0167-9317(03)00380-0
- 页码144-157