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Towards implementation of a nickel silicide process for CMOS technologies

Towards implementation of a nickel silicide process for CMOS technologies

C. Lavoie; F.M. d’Heurle; C. Detavernier; C. Cabral Jr.
  • 作者C. Lavoie; F.M. d’Heurle; C. Detavernier; C. Cabral Jr.
  • 卷第70卷
  • 印刷ISSN0167-9317
  • 文件大小652.39KB
  • 发表时间2003
  • DOI10.1016/s0167-9317(03)00380-0
  • 页码144-157
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