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The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma

The growth kinetics of silicon nitride deposited from the SiH4–N2 reactant mixture in a remote plasma

W.M.M. Kessels; F.J.H. van Assche; P.J. van den Oever; M.C.M. van de Sanden

作者W.M.M. Kessels; F.J.H. van Assche; P.J. van den Oever; M.C.M. van de Sanden
印刷ISSN0022-3093
文件大小289.20KB
发表时间2004
DOI10.1016/j.jnoncrysol.2004.02.017

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