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Lateral Migration of Trapped Holes in a Nitride Storage Flash Memory Cell and Its Qualification Methodology

Lateral Migration of Trapped Holes in a Nitride Storage Flash Memory Cell and Its Qualification Methodology

N. Zous; M. Lee; W. Tsai; A. Kuo; L. Huang; T. Lu; C. Liu; T. Wang; W. Lu; W. Ting; J. Ku; C. Lu
  • 作者N. Zous; M. Lee; W. Tsai; A. Kuo; L. Huang; T. Lu; C. Liu; T. Wang; W. Lu; W. Ting; J. Ku; C. Lu
  • 卷第25卷
  • 期第9期
  • 文件大小131.68KB
  • 发表时间2004
  • DOI10.1109/LED.2004.833824
  • 页码649-651
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