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Vacancy-related defect distributions in [sup 11]B-, [sup 14]N-, and [sup 27]Al-implanted 4H–SiC: Role of channeling

Vacancy-related defect distributions in [sup 11]B-, [sup 14]N-, and [sup 27]Al-implanted 4H–SiC: Role of channeling

Janson, M. S.

期刊名称Journal of Applied Physics
作者Janson, M. S.
卷第95卷
期第1期
印刷ISSN0021-8979
文件大小346.19KB
发表时间2004
DOI10.1063/1.1630359

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