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Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

Influence of surface orientation on the formation of sputtering-induced ripple topography in silicon

B. Fares; B. Gautier; N. Baboux; G. Prudon; P. Holliger; J.C. Dupuy
  • 作者B. Fares; B. Gautier; N. Baboux; G. Prudon; P. Holliger; J.C. Dupuy
  • 印刷ISSN0169-4332
  • 文件大小291.96KB
  • 发表时间2004
  • DOI10.1016/j.apsusc.2004.03.178
  • 页码678-683
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