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[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Modulation of drain current by redox-active molecules incorporated in Si MOSFETs

[IEEE IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - San Francisco, CA, USA (Dec. 13-15, 2004)] IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. - Modulation of drain current by redox-active molecules incorporated in Si MOSFETs

Gowda, S.; Mathur, G.; Qiliang Li, ; Surthi, S.; Qian Zhao, ; Lindsey, J.S.; Bocian, D.F.; Misra, V.
  • 作者Gowda, S.; Mathur, G.; Qiliang Li, ; Surthi, S.; Qian Zhao, ; Lindsey, J.S.; Bocian, D.F.; Misra, V.
  • 文件大小319.72KB
  • 发表时间2004
  • DOI10.1109/iedm.2004.1419267
  • 页码707-710
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