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Modeling Atomistic Ion-Implantation and Diffusion for Simulating Intrinsic Fluctuation in MOSFETs arising from Line-Edge Roughness

Modeling Atomistic Ion-Implantation and Diffusion for Simulating Intrinsic Fluctuation in MOSFETs arising from Line-Edge Roughness

Hane, Masami; Ikezawa, Takeo; Ezaki, Tatsuya
  • 期刊名称MRS Proceedings
  • 作者Hane, Masami; Ikezawa, Takeo; Ezaki, Tatsuya
  • 卷第810卷
  • 电子ISSN1946-4274
  • 文件大小1195.08KB
  • 发表时间2004-1
  • DOI10.1557/PROC-810-C6.1
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