Investigation of surface properties of Si-doped GaN films by electric force microscopy and photoluminescence

• 作者T.Y. Lin; W.S. Su; W.S. Su; Y.F. Chen
• 卷第130卷
• 印刷ISSN0038-1098
• 文件大小658.83KB
• 发表时间2004
• DOI10.1016/j.ssc.2004.01.011
• 页码49-52