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Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

Cross-Sectional Channel Shape Dependence of Short-Channel Effects in Fin-Type Double-Gate Metal Oxide Semiconductor Field-Effect Transistors

Liu, Yongxun; Ishii, Kenichi; Masahara, Meishoku; Tsutsumi, Toshiyuki; Takashima, Hidenori; Yamauchi, Hiromi; Suzuki, Eiichi
  • 期刊名称Japanese Journal of Applied Physics
  • 作者Liu, Yongxun; Ishii, Kenichi; Masahara, Meishoku; Tsutsumi, Toshiyuki; Takashima, Hidenori; Yamauchi, Hiromi; Suzuki, Eiichi
  • 卷第43卷
  • 印刷ISSN0021-4922
  • 电子ISSN1347-4065
  • 文件大小287.18KB
  • 发表时间2004-4-27
  • DOI10.1143/JJAP.43.2151
  • 页码2151-2155
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