[IEEE 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - Beijing, China (Oct. 18-21, 2004)] Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004. - An analytical breakdown model of high voltage SOI device considering the modulation of step buried-oxide interface charges
- 作者Yufeng Guo, ; Zhaoji Li, ; Bo Zhang, ; Jian Fang,
- 卷第1卷
- 文件大小889.27KB
- 发表时间2004
- DOI10.1109/ICSICT.2004.1435026
- 页码357-360
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