[IEEE 2004 International Conference on Microelectronic Test Structures - Awaji Yumebutai, Japan (22-25 March 2004)] Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516) - Device characterizations and physical models of strained-Si channel CMOS

Maeda, T.; Numata, T.; Mizuno, T.; Usuda, K.; Tanabe, A.; Tezuka, T.; Nakaharai, S.; Koga, J.; Irisawa, T.; Moriyama, Y.; Hirashita, N.; Sugiyama, N.; Takagi, S.

作者Maeda, T.; Numata, T.; Mizuno, T.; Usuda, K.; Tanabe, A.; Tezuka, T.; Nakaharai, S.; Koga, J.; Irisawa, T.; Moriyama, Y.; Hirashita, N.; Sugiyama, N.; Takagi, S.
文件大小463.65KB
发表时间2004
DOI10.1109/icmts.2004.1309466
页码133-138

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[IEEE 2004 International Conference on Microelectronic Test Structures - Awaji Yumebutai, Japan (22-25 March 2004)] Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516) - Device characterizations and physical models of strained-Si channel CMOS