Efficient near IR photoluminescence from gallium nitride layers doped with arsenic

• 作者A. V. Andrianov; S. V. Novikov; I. S. Zhuravlev; T. Li; R. Xia; S. Bull; I. Harrison; E. C. Larkins; C. T. Foxon
• 卷第39卷
• 期第1期
• 印刷ISSN1063-7826
• 电子ISSN1090-6479
• 文件大小64.16KB
• 发表时间2005-01
• DOI10.1134/1.1852649
• 页码73-76