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High-power 660-nm GaInP-AlGaInP laser diodes with low vertical beam divergence angles

High-power 660-nm GaInP-AlGaInP laser diodes with low vertical beam divergence angles

Byungjin Ma; Soohaeng Cho; Changyoun Lee; Youngmin Kim; Yongjo Park
  • 作者Byungjin Ma; Soohaeng Cho; Changyoun Lee; Youngmin Kim; Yongjo Park
  • 卷第17卷
  • 期第7期
  • 文件大小284.80KB
  • 发表时间2005
  • DOI10.1109/lpt.2005.849977
  • 页码1375-1377
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