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Crystal structure and atomic arrangement of the metastable Ge[sub 2]Sb[sub 2]Te[sub 5] thin films deposited on SiO[sub 2]âSi substrates by sputtering method

Crystal structure and atomic arrangement of the metastable Ge[sub 2]Sb[sub 2]Te[sub 5] thin films deposited on SiO[sub 2]âSi substrates by sputtering method

Park, Y. J.; Lee, J. Y.; Youm, M. S.; Kim, Y. T.; Lee, H. S.

期刊名称Journal of Applied Physics
作者Park, Y. J.; Lee, J. Y.; Youm, M. S.; Kim, Y. T.; Lee, H. S.
卷第97卷
期第9期
印刷ISSN0021-8979
文件大小1228.52KB
发表时间2005
DOI10.1063/1.1877821

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