Epitaxial tilting of GaN grown on vicinal surfaces of sapphire
- 期刊名称Applied Physics Letters
- 作者Huang, X. R.; Bai, J.; Dudley, M.; Dupuis, R. D.; Chowdhury, U.
- 卷第86卷
- 期第21期
- 印刷ISSN0003-6951
- 文件大小527.29KB
- 发表时间2005
- DOI10.1063/1.1940123
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