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[IEEE 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. - Beijing, People's Republic of China (Sept. 20-25, 2005)] 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. - N doped a-SiC:H films deposited by PECVD and annealed by pulse electron beam

[IEEE 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. - Beijing, People's Republic of China (Sept. 20-25, 2005)] 13th International Conference on Semiconducting and Insulating Materials, 2004. SIMC-XIII-2004. - N doped a-SiC:H films deposited by PECVD and annealed by pulse electron beam

Huran, J.; Hotov, I.; Dubeck, F.; Balalykin, N.I.
  • 作者Huran, J.; Hotov, I.; Dubeck, F.; Balalykin, N.I.
  • 文件大小250.90KB
  • 发表时间2005
  • DOI10.1109/SIM.2005.1511394
  • 页码93-97
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