[IEEE kshop on Junction Technology - Osaka, Japan (2005.06.7-2005.06.8)] Extended Abstracts of the Fifth International Workshop on Junction Technology - Anomalous doping profile in heavily doped Ge

• 作者Hosawa, K.; Matsumoto, K.; Shibahara, K.
• 文件大小1233.95KB
• 发表时间2005
• DOI10.1109/iwjt.2005.203875
• 页码43-44